Simulation study of scaling design, performance characterization, statistical variability and reliability of decananometer MOSFETs

This thesis describes a comprehensive, simulation based scaling study – including device design, performance characterization, and the impact of statistical variability – on deca-nanometer bulk MOSFETs. After careful calibration of fabrication processes and electrical characteristics for n- and p-MOSFETs with 35 nm physical gate length, 1 nm EOT and stress engineering, the simulated devices closely match the performance of contemporary 45 nm CMOS technologies. Scaling to 25 nm, 18 nm and 13 nm gate length n and p devices follows generalized scaling rules, augmented by physically realistic constraints and the introduction of high-k/metal-gate stacks. The scaled devices attain the performance stipulated by the ITRS. Device a.c. performance is analyzed, at device and circuit level. Extrinsic parasitics become critical to nano-CMOS device performance. The thesis describes device capacitance components, analyzes the CMOS inverter, and obtains new insights into the inverter propagation delay in nano-CMOS. The projection of a.c. performance of scaled devices is obtained. The statistical variability of electrical characteristics, due to intrinsic parameter fluctuation sources, in contemporary and scaled decananometer MOSFETs is systematically investigated for the first time. The statistical variability sources: random discrete dopants, gate line edge roughness and poly-silicon granularity are simulated, in combination, in an ensemble of microscopically different devices. An increasing trend in the standard deviation of the threshold voltage as a function of scaling is observed. The introduction of high-k/metal gates improves electrostatic integrity and slows this trend. Statistical evaluations of variability in Ion and Ioff as a function of scaling are also performed. For the first time, the impact of strain on statistical variability is studied. Gate line edge roughness results in areas of local channel shortening, accompanied by locally increased strain, both effects increasing the local current. Variations are observed in both the drive current, and in the drive current enhancement normally expected from the application of strain. In addition, the effects of shallow trench isolation (STI) on MOSFET performance and on its statistical variability are investigated for the first time. The inverse-narrow-width effect of STI enhances the current density adjacent to it. This leads to a local enhancement of the influence of junction shapes adjacent to the STI. There is also a statistical impact on the threshold voltage due to random STI induced traps at the silicon/oxide interface

A device-level characterization approach to quantify the impacts of different random variation sources in FinFET technology

A simple device-level characterization approach to quantitatively evaluate the impacts of different random variation sources in FinFETs is proposed. The impacts of random dopant fluctuation are negligible for FinFETs with lightly doped channel, leaving metal gate granularity and line-edge roughness as the two major random variation sources. The variations of Vth induced by these two major categories are theoretically decomposed based on the distinction in physical mechanisms and their influences on different electrical characteristics. The effectiveness of the proposed method is confirmed through both TCAD simulations and experimental results. This letter can provide helpful guidelines for variation-aware technology development

Simulation Based DC and Dynamic Behaviour Characterization of Z2FET

This work presents a TCAD investigation of the operation of a Z2FET device for memory application, where the TCAD model is well calibrated to experimental hysteresis curves. The DC operation of the Z2FET has been analyzed for 4 cases, based on the permutations of the front and back gate biases, to identify and compare different modes of operation. The memory mode of operation is under the “Thyristor” like scenario with positive and negative biases applied to the front and back gates respectively. The dynamic property of Z2FET as a memory device is shown and its operation mechanism is described

Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance

In this paper, we investigate the impact of a single discrete charge trapped at the top oxide interface on the performance of scaled nMOS FinFET transistors. The charge-trapping-induced gate voltage shift is simulated as a function of the device scaling and for several regimes of conduction-from subthreshold to ON-state. Contrary to what is expected for planar MOSFETs, we show that the trap impact decreases with scaling down the FinFET size and the applied gate voltage. By comparing drift-diffusion with nonequilibrium Green functions simulations, we show that quantum effects in the charge distribution and transport can reduce or amplify the impact of discrete traps in simulation of reliability resilience of scaled FinFETs

TGFBI promoter hypermethylation correlating with paclitaxel chemoresistance in ovarian cancer

The purpose of this study is to determine the methylation status of Transforming growth factor-beta-inducible gene-h3 (TGFBI) and its correlation with paclitaxel chemoresistance in ovarian cancer. The methylation status of TGFBI was examined in ovarian cancer and control groups by methylation-specific PCR (MSP) and bisulfite sequencing PCR (BSP). The TGFBI expression and cell viability were compared by Quantitative Real-Time PCR, Western Blotting and MTT assay before and after demethylating agent 5-aza-2'-deoxycytidine (5-aza-dc) treatment in 6 cell lines (SKOV3, SKOV3/TR, SKOV3/DDP, A2780, 2780/TR, OVCAR8). In our results, TGFBI methylation was detected in 29/40 (72.5%) of ovarian cancer and 1/10 (10%) of benign ovarian tumors. No methylation was detected in normal ovarian tissues (P < 0.001). No statistical correlation between RUNX3 methylation and clinicopathological characteristics was observed. A significant correlation between TGFBI methylation and loss of TGFBI mRNA expression was found (P < 0.001). The methylation level of TGFBI was significantly higher in paclitaxel resistant cell lines (SKOV3/TR and 2780/TR) than that in the sensitive pairs (P < 0.001). After 5-aza-dc treatment, the relative expression of TGFBI mRNA and protein increased significantly in SKOV3/TR and A2780/TR cells. However, no statistical differences of relative TGFBI mRNA expression and protein were found in other cells (all P > 0.05), which showed that re-expression of TGFBI could reverse paclitaxel chemoresistance. Our results show that TGFBI is frequently methylated and associated with paclitaxel-resistance in ovarian cancer. TGFBI might be a potential therapeutic target for the enhancement of responses to chemotherapy in ovarian cancer patients

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

In this work we investigate the impact of quantum mechanical effects on the device performance of n-type silicon nanowire transistors (NWT) for possible future CMOS applications at the scaling limit. For the purpose of this paper, we created Si NWTs with two channel crystallographic orientations &lt;110&gt; and &lt;100&gt; and six different cross-section profiles. In the first part, we study the impact of quantum corrections on the gate capacitance and mobile charge in the channel. The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic performance of the NWTs, is also investigated. The influence of the rotating of the NWTs cross-sectional geometry by 90o on charge distribution in the channel is also studied. We compare the correlation between the charge profile in the channel and cross-sectional dimension for circular transistor with four different cross-sections diameters: 5nm, 6nm, 7nm and 8nm. In the second part of this paper, we expand the computational study by including different gate lengths for some of the Si NWTs. As a result, we establish a correlation between the mobile charge distribution in the channel and the gate capacitance, drain-induced barrier lowering (DIBL) and the subthreshold slope (SS). All calculations are based on a quantum mechanical description of the mobile charge distribution in the channel. This description is based on the solution of the Schrödinger equation in NWT cross sections along the current path, which is mandatory for nanowires with such ultra-scale dimensions

Deformation-diffusion coupled analysis of long-term hydrogen diffusion in nanofilms

The absorption and desorption of hydrogen in nanomaterials can be characterized by an atomic, deformation-diffusion coupled process with a time scale of the order of seconds to hours. This time scale is beyond the time windows of conventional atomistic computational models such as molecular dynamics (MD) and transition state theory based accelerated MD. In this paper, we present a novel, deformation-diffusion coupled computational model basing on non-equilibrium statistical mechanics, which allows long-term simulation of hydrogen absorption and desorption at atomic scale. Specifically, we propose a carefully designed trial Hamiltonian in order to construct our meanfield based approximation, then apply it to investigate the palladium-hydrogen (Pd-H) system. Specifically, here we combine the meanfield model with a discrete kinetic law for hydrogen diffusion in palladium nanofilms. This combination in practice defines the evolution of hydrogen atomic fractions and lattice constants, which facilitates the characterization of the deformation-diffusion process of hydrogen over both space and time. Using the embedded atom model (EAM) potential, we investigate the deformation-diffusion problem of hydrogen desorption and absorption in palladium nanofilms and compare our results with experiments both in equilibrium and non-equilibrium cases

Impact of Strain on the Performance of Si Nanowires Transistors at the Scaling Limit: A 3D Monte Carlo/2D Poisson Schrodinger Simulation Study

In this work we investigate the correlation between channel strain and device performance in various n-type Si-NWTs. We establish a correlation between strain, gate length and cross-section dimension of the transistors. For the purpose of this paper we simulate Si NWTs with a &lt;110&gt; channel orientation, four different ellipsoidal channel cross-sections and five gate lengths: 4nm, 6nm, 8nm, 10nm and 12nm. We have also analyzed the impact of strain on drain-induced barrier lowering (DIBL) and the subthreshold slope (SS). All simulations are based on a quantum mechanical description of the mobile charge distribution in the channel obtained from a 2D solution of the Schrödinger equation in multiple cross sections along the current path, which is mandatory for nanowires with such ultra-scale dimensions. The current transport along the channel is simulated using 3D Monte Carlo (MC) and drift-diffusion (DD) approaches

Solution structure of the second bromodomain of Brd2 and its specific interaction with acetylated histone tails

<p>Abstract</p> <p>Background</p> <p>Brd2 is a transcriptional regulator and belongs to BET family, a less characterized novel class of bromodomain-containing proteins. Brd2 contains two tandem bromodomains (BD1 and BD2, 46% sequence identity) in the N-terminus and a conserved motif named ET (extra C-terminal) domain at the C-terminus that is also present in some other bromodomain proteins. The two bromodomains have been shown to bind the acetylated histone H4 and to be responsible for mitotic retention on chromosomes, which is probably a distinctive feature of BET family proteins. Although the crystal structure of Brd2 BD1 is reported, no structure features have been characterized for Brd2 BD2 and its interaction with acetylated histones.</p> <p>Results</p> <p>Here we report the solution structure of human Brd2 BD2 determined by NMR. Although the overall fold resembles the bromodomains from other proteins, significant differences can be found in loop regions, especially in the ZA loop in which a two amino acids insertion is involved in an uncommon <it>π</it>-helix, termed <it>π</it>D. The helix <it>π</it>D forms a portion of the acetyl-lysine binding site, which could be a structural characteristic of Brd2 BD2 and other BET bromodomains. Unlike Brd2 BD1, BD2 is monomeric in solution. With NMR perturbation studies, we have mapped the H4-AcK12 peptide binding interface on Brd2 BD2 and shown that the binding was with low affinity (2.9 mM) and in fast exchange. Using NMR and mutational analysis, we identified several residues important for the Brd2 BD2-H4-AcK12 peptide interaction and probed the potential mechanism for the specific recognition of acetylated histone codes by Brd2 BD2.</p> <p>Conclusion</p> <p>Brd2 BD2 is monomeric in solution and dynamically interacts with H4-AcK12. The additional secondary elements in the long ZA loop may be a common characteristic of BET bromodomains. Surrounding the ligand-binding cavity, five aspartate residues form a negatively charged collar that serves as a secondary binding site for H4-AcK12. We suggest that Brd2 BD1 and BD2 may possess distinctive roles and cooperate to regulate Brd2 functions. The structure basis of Brd2 BD2 will help to further characterize the functions of Brd2 and its BET members.</p